30F131, GT30F131 Panasonic IGBT Transistor
$2.79
Panasonic # B1JBDN000004
Brand : Toshiba™
Made in JAPAN
VCES / Icp @3 μs : 360 V / 200 A
VCE(sat) (V) Typ. @120 A : 1.9
Insulated Gate Bipolar Transistor
Case Style: TO263
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Brand : Toshiba™
Made in JAPAN
VCES / Icp @3 μs : 360 V / 200 A
VCE(sat) (V) Typ. @120 A : 1.9
Insulated Gate Bipolar Transistor
Case Style: TO263
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